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IRF630 N-channel MOSFET
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IRF630 N-channel MOSFET, 9 A, 200 V, 3-Pin TO-220
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
10.4mm
Transistor Configuration
Single
Typical Turn-On Delay Time
10 ns
Brand
STMicroelectronics
Maximum Continuous Drain Current
9 A
Package Type
TO-220
Maximum Power Dissipation
75 W
Mounting Type
Through Hole
Minimum Operating Temperature
-65 °C
Width
4.6mm
Maximum Gate Threshold Voltage
4V
Height
9.15mm
Minimum Gate Threshold Voltage
2V
Maximum Drain Source Resistance
400 mΩ
Board Level Components
Y
Maximum Drain Source Voltage
200 V
Pin Count
3
Dimensions
10.4 x 4.6 x 9.15mm
Category
Power MOSFET
Typical Gate Charge @ Vgs
31 nC @ 10 V
Transistor Material
Si
Channel Mode
Enhancement
Typical Input Capacitance @ Vds
540 pF @ 25 V
Channel Type
N
Maximum Gate Source Voltage
±20 V
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