The H21A1 consist of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a plastic housing. The packaging system is designed to optimize the mechanical resolution, coupling efficiency, ambient light rejection, cost and reliability. The gap in the housing provides a means of interrupting the signal with an opaque material, switching the output from an “ON” to an “OFF” state.

Features

• Opaque housing
• Low cost
• 0.035” apertures
• High Ic(ON)

Electrical/Optical Characteristics

Parameter

• Operating Temperature: -55 to +100 °C
• Storage Temperature: -55 to +100 °C
• Soldering Temperature (Iron): 240°C for 5 sec
• Soldering Temperature (Flow): 260°C for 10 sec

INPUT (Emitter)

• Continuous Forward Current: 50 mA
• Reverse Voltage: 6V
• Power Dissipation: 100 mW

OUTPUT (Sensor)

• Collector to Emitter Voltage: 30 V
• Emitter to Collector Voltage : 4.5 V
• Collector Current: 20 mA
• Power Dissipation: 150 mW

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